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Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Identifieur interne : 002622 ( Main/Repository ); précédent : 002621; suivant : 002623

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Auteurs : RBID : Pascal:11-0142187

Descripteurs français

Pascal (Inist)
- Composé organométallique, Epitaxie jet moléculaire, Mécanisme croissance, Point quantique, Nanomatériau, Aluminium Gallium Arséniure Mixte, Méthode MOVPE, Largeur raie, Vide poussé, Système optique, Nanostructure, Arséniate, Semiconducteur III-V, Arséniure d'indium, Arséniure de gallium, Arséniure d'aluminium, Nitrure de calcium, InGaAs, AlGaAs, Substrat GaAs, 8115H, 6855A, 8107T, 8107.

English descriptors

KwdEn :
- Aluminium Gallium Arsenides Mixed, Aluminium arsenides, Arsenates, Calcium nitride, Gallium arsenides, Growth mechanism, High vacuum, III-V semiconductors, Indium arsenides, Line widths, MOVPE method, Molecular beam epitaxy, Nanostructured materials, Nanostructures, Optical systems, Organometallic compounds, Quantum dots.

Abstract

We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.

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Pascal:11-0142187

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<author><name sortKey="Dimastrodonato, V" uniqKey="Dimastrodonato V">V. Dimastrodonato</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, "Lee Maltings", Dyke Parade</s1>
<s2>Cork</s2>
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<author><name sortKey="Mereni, L O" uniqKey="Mereni L">L. O. Mereni</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, "Lee Maltings", Dyke Parade</s1>
<s2>Cork</s2>
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<author><name sortKey="Young, R J" uniqKey="Young R">R. J. Young</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, "Lee Maltings", Dyke Parade</s1>
<s2>Cork</s2>
<s3>IRL</s3>
<sZ>1 aut.</sZ>
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<author><name sortKey="Pelucchi, E" uniqKey="Pelucchi E">E. Pelucchi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, "Lee Maltings", Dyke Parade</s1>
<s2>Cork</s2>
<s3>IRL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<publicationStmt><idno type="inist">11-0142187</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0142187 INIST</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Gallium Arsenides Mixed</term>
<term>Aluminium arsenides</term>
<term>Arsenates</term>
<term>Calcium nitride</term>
<term>Gallium arsenides</term>
<term>Growth mechanism</term>
<term>High vacuum</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Line widths</term>
<term>MOVPE method</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Optical systems</term>
<term>Organometallic compounds</term>
<term>Quantum dots</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Composé organométallique</term>
<term>Epitaxie jet moléculaire</term>
<term>Mécanisme croissance</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Aluminium Gallium Arséniure Mixte</term>
<term>Méthode MOVPE</term>
<term>Largeur raie</term>
<term>Vide poussé</term>
<term>Système optique</term>
<term>Nanostructure</term>
<term>Arséniate</term>
<term>Semiconducteur III-V</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'aluminium</term>
<term>Nitrure de calcium</term>
<term>InGaAs</term>
<term>AlGaAs</term>
<term>Substrat GaAs</term>
<term>8115H</term>
<term>6855A</term>
<term>8107T</term>
<term>8107</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>315</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DIMASTRODONATO (V.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MERENI (L. O.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>YOUNG (R. J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>PELUCCHI (E.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>CANEAU (Catherine)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>KUECH (Tom)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Tyndall National Institute, University College Cork, "Lee Maltings", Dyke Parade</s1>
<s2>Cork</s2>
<s3>IRL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>119-122</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000194603110250</s5>
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<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>20 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0142187</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (∼27 μeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07T</s0>
</fC02>
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<s5>01</s5>
</fC03>
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<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Aluminium Gallium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Aluminium Gallium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Largeur raie</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Line widths</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Vide poussé</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>High vacuum</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Système optique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Optical systems</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Arséniate</s0>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Arsenates</s0>
<s2>NA</s2>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Nitrure de calcium</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Calcium nitride</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Calcio nitruro</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>094</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV)</s1>
<s2>15</s2>
<s3>Incline Village, NV USA</s3>
<s4>2010-05-23</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri